An avalanche photodiode (APD) is a highly sensitive type of photodiode, which in general are semiconductor diodes that convert light into electricity via interband excitation coupled with impact ionization. APDs use materials and a structure optimised for operating with high reverse bias, approaching the reverse breakdown voltage, such that charge carriers generated by the photoelectric effect are multiplied by an avalanche breakdown; thus they can be used to detect relatively small amounts of light.
From a functional standpoint, they can be regarded as the semiconductor analog of photomultiplier tubes; unlike solar cells, they are not optimised for generating electricity from light but rather for detection of incoming photons. Typical applications for APDs are laser rangefinders, long-range fiber-optic telecommunication, positron emission tomography, and particle physics.