Ballistic deflection transistor

Ballistic deflection transistors (BDTs) are electronic devices, developed since 2006,[1] for high-speed integrated circuits, which is a set of circuits bounded on semiconductor material. They use electromagnetic forces instead of a logic gate, a device used to perform solely on specified inputs, to switch the forces of electrons. The unique design of this transistor includes individual electrons bouncing from wedge-shaped obstacles called deflectors.[2] Initially accelerated by electric field, electrons are then guided on their respective paths by electromagnetic deflection. Electrons are therefore able to travel without being scattered by atoms or defects, thus resulting in improved speed and reduced power consumption.[3]

  1. ^ Quentin Diduck; Martin Margala; Marc J. Feldman (20 November 2006). "A Terahertz Transistor Based on Geometrical Deflection of Ballistic Current". 2006 IEEE MTT-S International Microwave Symposium Digest. pp. 345–347. doi:10.1109/MWSYM.2006.249522. ISBN 978-0-7803-9541-1. S2CID 8542845.
  2. ^ Sherwood, Jonathan. "Radical 'Ballistic Computing' Chip Bounces Electrons Like Billards". Archived from the original on 24 February 2013. Retrieved 17 August 2006.
  3. ^ Bell, Trudy E. (February 1986). "The Quest for Ballistic Action". IEEE Spectrum. 2. 23 (2): 36–38. Bibcode:1986IEEES..23...36B. doi:10.1109/mspec.1986.6370997. S2CID 36115685.