Band bending

In solid-state physics, band bending refers to the process in which the electronic band structure in a material curves up or down near a junction or interface. It does not involve any physical (spatial) bending. When the electrochemical potential of the free charge carriers around an interface of a semiconductor is dissimilar, charge carriers are transferred between the two materials until an equilibrium state is reached whereby the potential difference vanishes.[1] The band bending concept was first developed in 1938 when Mott, Davidov and Schottky all published theories of the rectifying effect of metal-semiconductor contacts.[2][3] The use of semiconductor junctions sparked the computer revolution in the second half of the 20th century. Devices such as the diode, the transistor, the photocell and many more play crucial roles in technology.

  1. ^ Zhang, Zhen; Yates, John T. (10 October 2012). "Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces". Chemical Reviews. 112 (10): 5520–5551. doi:10.1021/cr3000626. PMID 22783915.
  2. ^ Just, Th. (April 1938). "G. W. Steller". Die Naturwissenschaften. 26 (14): 224. Bibcode:1938NW.....26..224J. doi:10.1007/BF01590290. S2CID 33381617.
  3. ^ Mott, N. F. (October 1938). "Note on the contact between a metal and an insulator or semi-conductor". Mathematical Proceedings of the Cambridge Philosophical Society. 34 (4): 568–572. Bibcode:1938PCPS...34..568M. doi:10.1017/S0305004100020570. S2CID 222602877.