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A carbon nanotube field-effect transistor (CNTFET) is a field-effect transistor that utilizes a single carbon nanotube (CNT) or an array of carbon nanotubes as the channel material, instead of bulk silicon, as in the traditional MOSFET structure. There have been major developments since CNTFETs were first demonstrated in 1998.[1][2]
- ^ Dekker, Cees; Tans, Sander J.; Verschueren, Alwin R. M. (1998). "Room-temperature transistor based on a single carbon nanotube". Nature. 393 (6680): 49–52. Bibcode:1998Natur.393...49T. doi:10.1038/29954. S2CID 4403144.
- ^ Martel, R.; Schmidt, T.; Shea, H. R.; Hertel, T.; Avouris, Ph. (1998). "Single- and multi-wall carbon nanotube field-effect transistors" (PDF). Applied Physics Letters. 73 (17): 2447. Bibcode:1998ApPhL..73.2447M. doi:10.1063/1.122477.