This article is about non-volatile memory utilizing a ferroelectric in the capacitive structure of a DRAM cell. For single transistor Ferrolectric FET memory, see FeFET memory.
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory. An FeRAM chip contains a thin film of ferroelectric material, often lead zirconate titanate, commonly referred to as PZT. The atoms in the PZT layer change polarity in an electric field, thereby producing a power-efficient binary switch. However, the most important aspect of the PZT is that it is not affected by power disruption or magnetic interference, making FeRAM a reliable nonvolatile memory.[1]
FeRAM's advantages over Flash include: lower power usage, faster write speeds[2] and a much greater maximum read/write endurance (about 1010 to 1015 cycles).[3][4] FeRAMs have data retention times of more than 10 years at +85 °C (up to many decades at lower temperatures).
Marked disadvantages of FeRAM are much lower storage densities than flash devices, storage capacity limitations and higher cost. Like DRAM, FeRAM's read process is destructive, necessitating a write-after-read architecture.
