Because GaN transistors can operate at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies. In addition, GaN offers promising characteristics for THz devices.[13] Due to high power density and voltage breakdown limits GaN is also emerging as a promising candidate for 5G cellular base station applications. Since the early 2020s, GaN power transistors have come into increasing use in power supplies in electronic equipment, converting ACmains electricity to low-voltage DC.
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^Johan Strydom; Michael de Rooij; David Reusch; Alex Lidow (2019). GaN Transistors for efficient power conversion (3 ed.). California, USA: Wiley. p. 3. ISBN978-1-119-59442-0.
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