Compound of nitrogen with a formal oxidation state of –3
In chemistry , a nitride is a chemical compound of nitrogen . Nitrides can be inorganic or organic , ionic or covalent . The nitride anion , N3- ion, is very elusive but compounds of nitride are numerous, although rarely naturally occurring. Some nitrides have a found applications,[ 1] such as wear -resistant coatings (e.g., titanium nitride , TiN), hard ceramic materials (e.g., silicon nitride , Si3 N4 ), and semiconductors (e.g., gallium nitride , GaN). The development of GaN-based light emitting diodes was recognized by the 2014 Nobel Prize in Physics .[ 2] Metal nitrido complexes are also common.
Synthesis of inorganic metal nitrides is challenging because nitrogen gas (N2 ) is not very reactive at low temperatures, but it becomes more reactive at higher temperatures. Therefore, a balance must be achieved between the low reactivity of nitrogen gas at low temperatures and the entropy driven formation of N2 at high temperatures.[ 3] However, synthetic methods for nitrides are growing more sophisticated and the materials are of increasing technological relevance.[ 4]
^ Greenwood, Norman N. ; Earnshaw, Alan (1997). Chemistry of the Elements (2nd ed.). Butterworth-Heinemann . ISBN 978-0-08-037941-8 .
^ "The Nobel Prize in Physics 2014" . The Nobel Prize . Nobel Prize Outreach. Retrieved 13 January 2021 .
^ Sun, Wenhao; Bartel, Christopher J.; Arca, Elisabetta; Bauers, Sage R.; Matthews, Bethany; Orvañanos, Bernardo; Chen, Bor-Rong; Toney, Michael F.; Schelhas, Laura T.; Tumas, William; Tate, Janet ; Zakutayev, Andriy; Lany, Stephan; Holder, Aaron M.; Ceder, Gerbrand (2019). "A map of the inorganic ternary metal nitrides" . Nature Materials . 18 (7): 732–739. arXiv :1809.09202 . doi :10.1038/s41563-019-0396-2 . ISSN 1476-4660 . PMID 31209391 . S2CID 119461695 .
^ Greenaway, Ann L.; Melamed, Celeste L.; Tellekamp, M. Brooks; Woods-Robinson, Rachel; Toberer, Eric S.; Neilson, James R.; Tamboli, Adele C. (2021-07-26). "Ternary Nitride Materials: Fundamentals and Emerging Device Applications" . Annual Review of Materials Research . 51 (1): 591–618. arXiv :2010.08058 . doi :10.1146/annurev-matsci-080819-012444 . ISSN 1531-7331 . S2CID 223953608 .