 Various Schottky-barrier diodes: Small-signal RF devices (left), medium- and high-power Schottky rectifying diodes (middle and right) | |
| Type | Passive |
|---|---|
| Invented | Walter H. Schottky |
| Pin configuration | anode and cathode |
| Electronic symbol | |
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The Schottky diode (named after the German physicist Walter H. Schottky), also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky diodes.
When sufficient forward voltage is applied, a current flows in the forward direction. A silicon p–n diode has a typical forward voltage of 600–700 mV, while the Schottky's forward voltage is 150–450 mV. This lower forward voltage requirement allows higher switching speeds and better system efficiency.