Silicon on insulator

For silicon on insulator optical devices, see silicon photonics.

In semiconductor manufacturing, silicon on insulator (SOI) technology is fabrication of silicon semiconductor devices in a layered silicon–insulator–silicon substrate, to reduce parasitic capacitance within the device, thereby improving performance.[1] SOI-based devices differ from conventional silicon-built devices in that the silicon junction is above an electrical insulator, typically silicon dioxide or sapphire (these types of devices are called silicon on sapphire, or SOS). The choice of insulator depends largely on intended application, with sapphire being used for high-performance radio frequency (RF) and radiation-sensitive applications, and silicon dioxide for diminished short-channel effects in other microelectronics devices.[2] The insulating layer and topmost silicon layer also vary widely with application.[3]

  1. ^ Celler, G. K.; Cristoloveanu, S. (2003). "Frontiers of silicon-on-insulator". Journal of Applied Physics. 93 (9): 4955. Bibcode:2003JAP....93.4955C. doi:10.1063/1.1558223.
  2. ^ Marshall, Andrew; Natarajan, Sreedhar (2002). SOI design: analog, memory and digital techniques. Kluwer. ISBN 0-7923-7640-4.
  3. ^ Colinge, Jean-Pierre (1991). Silicon-on-Insulator Technology: Materials to VLSI. Springer. ISBN 978-0-7923-9150-0.