Single-electron transistor

A single-electron transistor (SET) is a sensitive electronic device based on the Coulomb blockade effect. In this device the electrons flow through a tunnel junction between source/drain to a quantum dot (conductive island). Moreover, the electrical potential of the island can be tuned by a third electrode, known as the gate, which is capacitively coupled to the island. The conductive island is sandwiched between two tunnel junctions^[1] modeled by capacitors, $C_{\rm {D}}$ and $C_{\rm {S}}$ , and resistors, $R_{\rm {D}}$ and $R_{\rm {S}}$ , in parallel.

^ Mahapatra, S.; Vaish, V.; Wasshuber, C.; Banerjee, K.; Ionescu, A.M. (2004). "Analytical Modeling of Single Electron Transistor for Hybrid CMOS-SET Analog IC Design". IEEE Transactions on Electron Devices. 51 (11): 1772–1782. Bibcode:2004ITED...51.1772M. doi:10.1109/TED.2004.837369. ISSN 0018-9383. S2CID 15373278.

[1] Mahapatra, S.; Vaish, V.; Wasshuber, C.; Banerjee, K.; Ionescu, A.M. (2004). "Analytical Modeling of Single Electron Transistor for Hybrid CMOS-SET Analog IC Design". IEEE Transactions on Electron Devices. 51 (11): 1772–1782. Bibcode:2004ITED...51.1772M. doi:10.1109/TED.2004.837369. ISSN 0018-9383. S2CID 15373278.

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