Names | |
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Other names
Tin(II) selenide
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Identifiers | |
3D model (JSmol)
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ChemSpider | |
ECHA InfoCard | 100.013.871 |
EC Number |
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PubChem CID
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UNII | |
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Properties | |
SnSe | |
Molar mass | 197.67 g/mol |
Appearance | steel gray odorless powder |
Density | 5.75 g/cm3[1] |
Melting point | 861 °C (1,582 °F; 1,134 K) |
negligible | |
Band gap | 0.9 eV (indirect), 1.3 eV (direct)[2] |
Structure | |
Orthorhombic, oP8[2] | |
Pnma, No. 62[2] | |
a = 4.4 Å, b = 4.2 Å, c = 11.5 Å[3]
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Thermochemistry | |
Std enthalpy of
formation (ΔfH⦵298) |
-88.7 kJ/mol |
Hazards | |
GHS labelling: | |
Danger | |
H301, H331, H373, H410 | |
P260, P261, P264, P270, P271, P273, P301+P310, P304+P340, P311, P314, P321, P330, P391, P403+P233, P405, P501 | |
NFPA 704 (fire diamond) | |
Safety data sheet (SDS) | https://www.ltschem.com/msds/SnSe.pdf |
Related compounds | |
Other anions
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Tin(II) oxide Tin(II) sulfide Tin telluride |
Other cations
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Carbon monoselenide Silicon monoselenide Germanium selenide Lead selenide |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Tin selenide, also known as stannous selenide, is an inorganic compound with the formula SnSe. Tin(II) selenide is a typical layered metal chalcogenide[4] as it includes a group 16 anion (Se2−) and an electropositive element (Sn2+), and is arranged in a layered structure. Tin(II) selenide is a narrow band-gap (IV-VI) semiconductor structurally analogous to black phosphorus. It has received considerable interest for applications including low-cost photovoltaics, and memory-switching devices.
Because of its low thermal conductivity as well as reasonable electrical conductivity, tin selenide is one of the most efficient thermoelectric materials.[5][6]
wire
was invoked but never defined (see the help page).