Aluminium arsenide

Aluminium arsenide
Identifiers
3D model (JSmol)
ChemSpider
ECHA InfoCard 100.041.126 Edit this at Wikidata
EC Number
  • 245-555-0
  • InChI=1S/Al.As checkY
    Key: MDPILPRLPQYEEN-UHFFFAOYSA-N checkY
  • InChI=1/Al.As/rAlAs/c1-2
    Key: MDPILPRLPQYEEN-LYSWLDLJAW
  • [AsH+]12[Al-][AsH+]3[Al-][AsH+]([AlH-]14)[AlH-]1[As+]5([AlH-]38)[Al-]26[AsH+]2[AlH-]([As+]4)[AsH+]1[Al-][AsH+]3[AlH-]2[As+][AlH-]([AsH+]6[AlH-]([AsH+])[AsH+]68)[AsH+]([Al-]6)[AlH-]35
Properties
AlAs
Molar mass 101.9031 g/mol
Appearance orange crystals
Density 3.72 g/cm3
Melting point 1,740 °C (3,160 °F; 2,010 K)
reacts
Solubility reacts in ethanol
Band gap 2.17 eV (indirect)[1]
Electron mobility 200 cm2/(V·s) (300 K)
Thermal conductivity 0.9 W/(cm·K) (300 K)
3 (infrared)
Structure
Zinc Blende
T2d-F-43m
a = 566.0 pm
Tetrahedral
Thermochemistry
60.3 J/mol K
-116.3 kJ/mol
Hazards
NIOSH (US health exposure limits):
PEL (Permissible)
 [1910.1018] TWA 0.010 mg/m3[2]
REL (Recommended)
 Ca C 0.002 mg/m3 [15-minute][2]
IDLH (Immediate danger)
 Ca [5 mg/m3 (as As)][2]
Related compounds
Related semiconductor materials
 Aluminium gallium arsenide, Aluminium indium arsenide, Aluminium antimonide, Boron arsenide
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Aluminium arsenide (AlAs) is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider band gap than gallium arsenide. (AlAs) can form a superlattice with gallium arsenide (GaAs) which results in its semiconductor properties.[3] Because GaAs and AlAs have almost the same lattice constant, the layers have very little induced strain, which allows them to be grown almost arbitrarily thick. This allows for extremely high performance high electron mobility, HEMT transistors, and other quantum well devices.[4][page needed]

  1. ^ "AlxGa1−xAs". Ioffe Database. Sankt-Peterburg: FTI im. A. F. Ioffe, RAN.
  2. ^ a b c NIOSH Pocket Guide to Chemical Hazards. "#0038". National Institute for Occupational Safety and Health (NIOSH).
  3. ^ Guo, L. "Structural, Energetic, and Electronic Properties of Hydrogenated Aluminum Arsenide Clusters". Journal of Nanoparticle Research. Vol. 13 Issue 5 p. 2029-2039. 2011.
  4. ^ S. Adachi, GaAs and Related Materials: Bulk Semiconducting and Superlattice Properties. (World Scientific, Singapore, 1994)