Aluminium gallium indium phosphide

Aluminium gallium indium phosphide
Identifiers
CAS Number	163207-18-9;
Properties
Chemical formula	AlGaInP
Structure
Crystal structure	Cubic
	Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). Infobox references

Aluminium gallium indium phosphide (Al Ga In P, also AlInGaP, InGaAlP, etc.) is a semiconductor material that provides a platform for the development of multi-junction photovoltaics and optoelectronic devices. It has a direct bandgap ranging from ultraviolet to infrared photon energies.^[1]

AlGaInP is used in heterostructures for high-brightness red, orange, green, and yellow light-emitting diodes. It is also used to make diode lasers.

^ Rodrigo, SM; Cunha, A; Pozza, DH; Blaya, DS; Moraes, JF; Weber, JB; de Oliveira, MG (2009). "Analysis of the systemic effect of red and infrared laser therapy on wound repair". Photomed Laser Surg. 27 (6): 929–35. doi:10.1089/pho.2008.2306. hdl:10216/25679. PMID 19708798.

[:0-1] Rodrigo, SM; Cunha, A; Pozza, DH; Blaya, DS; Moraes, JF; Weber, JB; de Oliveira, MG (2009). "Analysis of the systemic effect of red and infrared laser therapy on wound repair". Photomed Laser Surg. 27 (6): 929–35. doi:10.1089/pho.2008.2306. hdl:10216/25679. PMID 19708798.

[1]

Identifiers
CAS Number	163207-18-9
Properties
Chemical formula	AlGaInP
Structure
Crystal structure	Cubic
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). Infobox references