 CIGS unit cell. Red = Cu, yellow = Se, blue = In/Ga
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| Identifiers | |
|---|---|
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| ChemSpider | |
| Properties | |
| CuIn1−xGaxSe2 | |
| Density | ~5.7 g/cm3 |
| Melting point | 1,070 to 990 °C (1,960 to 1,810 °F; 1,340 to 1,260 K) (x = 0–1)[1] |
| Band gap | 1.0–1.7 eV (x = 0–1)[1] |
| Structure | |
| tetragonal, Pearson symbol tI16 [1] | |
| I42d | |
a = 0.56–0.58 nm (x = 0–1), c = 1.10–1.15 nm (x = 0–1)
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Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Copper indium gallium (di)selenide (CIGS) is a I-III-VI2 semiconductor material composed of copper, indium, gallium, and selenium. The material is a solid solution of copper indium selenide (often abbreviated "CIS") and copper gallium selenide. It has a chemical formula of CuIn1−xGaxSe2, where the value of x can vary from 0 (pure copper indium selenide) to 1 (pure copper gallium selenide). CIGS is a tetrahedrally bonded semiconductor, with the chalcopyrite crystal structure, and a bandgap varying continuously with x from about 1.0 eV (for copper indium selenide) to about 1.7 eV (for copper gallium selenide).
- ^ a b c Tinoco, T.; Rincón, C.; Quintero, M.; Pérez, G. Sánchez (1991). "Phase Diagram and Optical Energy Gaps for CuInyGa1−ySe2 Alloys". Physica Status Solidi A. 124 (2): 427. Bibcode:1991PSSAR.124..427T. doi:10.1002/pssa.2211240206.