Indium phosphide

Indium phosphide
Names
Other names
Indium(III) phosphide
Identifiers
3D model (JSmol)
ChemSpider
ECHA InfoCard 100.040.856 Edit this at Wikidata
UNII
  • InChI=1S/In.P checkY
    Key: GPXJNWSHGFTCBW-UHFFFAOYSA-N checkY
  • InChI=1/In.P/rInP/c1-2
    Key: GPXJNWSHGFTCBW-HIYQQWJCAF
  • [In+3].[P-3]
  • [In]#P
Properties
InP
Molar mass 145.792 g/mol
Appearance black cubic crystals[1]
Density 4.81 g/cm3, solid[1]
Melting point 1,062 °C (1,944 °F; 1,335 K)[1]
Solubility slightly soluble in acids
Band gap 1.344 eV (300 K; direct)
Electron mobility 5400 cm2/(V·s) (300 K)
Thermal conductivity 0.68 W/(cm·K) (300 K)
3.1 (infrared);
3.55 (632.8 nm)[2]
Structure
Zinc blende
a = 5.8687 Å [3]
Tetrahedral
Thermochemistry[4]
45.4 J/(mol·K)
59.8 J/(mol·K)
-88.7 kJ/mol
-77.0 kJ/mol
Hazards
Occupational safety and health (OHS/OSH):
Main hazards
Toxic, hydrolysis to phosphine
Safety data sheet (SDS) External MSDS
Related compounds
Other anions
Indium nitride
Indium arsenide
Indium antimonide
Other cations
Aluminium phosphide
Gallium phosphide
Related compounds
Indium gallium phosphide
Aluminium gallium indium phosphide
Gallium indium arsenide antimonide phosphide
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors.

  1. ^ a b c Haynes, p. 4.66
  2. ^ Sheng Chao, Tien; Lee, Chung Len; Lei, Tan Fu (1993), "The refractive index of InP and its oxide measured by multiple-angle incident ellipsometry", Journal of Materials Science Letters, 12 (10): 721, doi:10.1007/BF00626698, S2CID 137171633.
  3. ^ "Basic Parameters of InP". Ioffe Institute, Russia.
  4. ^ Haynes, p. 5.23