Magneto-electric spin-orbit

Magneto-electric spin-orbit (MESO) is a technology designed for constructing scalable integrated circuits, that works with a different operating principle than CMOS devices such as MOSFETs, proposed by Intel,[1] that is compatible with CMOS device manufacturing techniques and machinery.[2][3]

MESO devices operate by the coupling of the magnetoelectric effect with the spin orbit coupling.[3] Specifically, the magnetoelectric effect will induce a change in magnetization within the device due to an induced electric field, which can then be read out by the spin orbit coupling component which converts it into an electric charge.[4][3] This mechanism is analogous to how a CMOS device operates with the source, gate and drain electrodes working together to form a logic gate.

As of 2020, the technology is under development by Intel and University of California, Berkeley.[5] The first experiment, conducted in 2020 in nanoGUNE, proved that spin-orbit coupling could be used for implementing MESO.[6]

  1. ^ https://www.extremetech.com/computing/286163-intels-fundamentally-new-meso-architecture-could-arrive-in-a-few-years
  2. ^ Cite error: The named reference venturebeat was invoked but never defined (see the help page).
  3. ^ a b c Cite error: The named reference nature was invoked but never defined (see the help page).
  4. ^ Cite error: The named reference MESO experimental demo was invoked but never defined (see the help page).
  5. ^ Cite error: The named reference designnews was invoked but never defined (see the help page).
  6. ^ Pham, Van Tuong; Groen, Inge; Manipatruni, Sasikanth; Choi, Won Young; Nikonov, Dmitri E.; Sagasta, Edurne; Lin, Chia-Ching; Gosavi, Tanay A.; Marty, Alain; Hueso, Luis E.; Young, Ian A. (June 2020). "Spin–orbit magnetic state readout in scaled ferromagnetic/heavy metal nanostructures". Nature Electronics. 3 (6): 309–315. arXiv:2002.10581. doi:10.1038/s41928-020-0395-y. ISSN 2520-1131. S2CID 211296841.