Molybdenum ditelluride

Molybdenum ditelluride
Molybdenum ditelluride
Names
IUPAC name
bis(tellanylidene)molybdenum
Other names
molybdenum(IV) telluride
Identifiers
3D model (JSmol)
ChemSpider
ECHA InfoCard 100.031.832 Edit this at Wikidata
EC Number
  • 235-028-4
  • InChI=1Te/Mo.2Te checkY
  • InChI=1/Mo.2Te/rMoS2/c2-1-3
    Key: HITXEXPSQXNMAN-UHFFFAOYSA-N
  • [Te]=[Mo]=[Te]
Properties
MoTe
2
Molar mass 351.14 g/mol[1]
Appearance black/lead-gray solid
Density 7.7 g/cm3[1]
Melting point decomposes
insoluble
Solubility decomposed by nitric acid
insoluble in non-oxidising acids
Band gap 1.1 eV (direct, monolayer)[2]
0.9 eV (indirect, bulk)[2][3]
Structure
hP6, P63/mmc, No. 194 (α or 2H)

mP12, P21/m, No. 11 (β or 1T)

Related compounds
Other anions
molybdenum(IV) oxide molybdenum disulfide molybdenum diselenide
Other cations
tungsten ditelluride
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
☒N (what is checkY☒N ?)

Molybdenum(IV) telluride, molybdenum ditelluride or just molybdenum telluride is a compound of molybdenum and tellurium with formula MoTe2, corresponding to a mass percentage of 27.32% molybdenum and 72.68% tellurium.

It can crystallise in two dimensional sheets which can be thinned down to monolayers that are flexible and almost transparent. It is a semiconductor, and can fluoresce. It is part of a class of materials called transition metal dichalcogenides. As a semiconductor the band gap lies in the infrared region. This raises the potential use as a semiconductor in electronics or an infrared detector.[4]

  1. ^ a b Haynes, William M., ed. (2011). CRC Handbook of Chemistry and Physics (92nd ed.). Boca Raton, FL: CRC Press. p. 4.76. ISBN 1-4398-5511-0.
  2. ^ a b Ruppert, Claudia; Aslan, Ozgur Burak; Heinz, Tony F. (12 November 2014). "Optical Properties and Band Gap of Single- and Few-Layer MoTe2 Crystals". Nano Letters. 14 (11): 6231–6236. Bibcode:2014NanoL..14.6231R. doi:10.1021/nl502557g. PMID 25302768.
  3. ^ Yun, Won Seok; Han, S. W.; Hong, Soon Cheol; Kim, In Gee; Lee, J. D. (2012). "Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2 semiconductors (M = Mo, W; X = S, Se, Te)". Physical Review B. 85 (3): 033305. Bibcode:2012PhRvB..85c3305Y. doi:10.1103/PhysRevB.85.033305.
  4. ^ Cite error: The named reference Zyga15 was invoked but never defined (see the help page).