Schottky diode

Schottky diode
Various Schottky-barrier diodes: Small-signal RF devices (left), medium- and high-power Schottky rectifying diodes (middle and right)
TypePassive
InventedWalter H. Schottky
Pin configuration anode and cathode
Electronic symbol

The Schottky diode (named after the German physicist Walter H. Schottky), also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky diodes.

When sufficient forward voltage is applied, a current flows in the forward direction. A silicon p–n diode has a typical forward voltage of 600–700 mV, while the Schottky's forward voltage is 150–450 mV. This lower forward voltage requirement allows higher switching speeds and better system efficiency.